Distributed-Model-Based Approach for Electrical and Thermal Analysis of High-Frequency GaN HEMTs

Thermal Behavior Investigation of Cascode GaN HEMTs

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...

Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process

Research of Electromagnetic-Thermal Coupling Mechanism Based on a Physical Model of AlGaN/GaN HEMTs

A single-finger physical model of 180 nm gatelength and 75 μm gate-width AlGaN/GaN HEMTs is described including lateral structure and vertical material parameters. The Farahmand Modified Caughey Thomas fitting function and the Monte Carlo model are used to express the 2DEG mobility in low and high field respectively. Then DC characteristics is simulated and the initial condition generated by se...

the use of appropriate madm model for ranking the vendors of mci equipments using fuzzy approach

abstract nowadays, the science of decision making has been paid to more attention due to the complexity of the problems of suppliers selection. as known, one of the efficient tools in economic and human resources development is the extension of communication networks in developing countries. so, the proper selection of suppliers of tc equipments is of concern very much. in this study, a ...

atedA GaN/GaN HEMTs

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.